PC1D helpThe Schottky diodes you're considering are ...
13, Jan. 2025
PC1D helpThe Schottky diodes you're considering are ...
'PC1D helpThe Schottky diodes you're considering are custom-made by a specialized electronics manufacturer. These diodes are 25 'mm2 'in size and are fabricated on 250\mu m thick p-type wafers with a resistance of 35 'm\Omega and a lifetime of 10\mu s. 'The manufacturer's technology allows them to create Schottky barriers on p-type silicon with a barrier height of 0.4 'eV on silicon layers containing 1x10^15 'cm^-3 'with a 10\mu s lifetime. They add a low-doped layer on top of the wafer, which can be up to 5\mu m thick, tailored by the design engineer (in this case, you) 'to achieve the desired breakdown voltage. Breakdown occurs at an electric field of 300 'kV/cm in the depletion region. It's crucial to design the breakdown voltage to be at least 20V higher than the highest reverse bias voltage the diode will encounter in any circuit. Note that for reverse bias I-V simulations, reducing the substrate thickness to 2\mu m may be necessary for simulation convergence. Additionally, a high surface recombination rate (e.g.,10^10 'cm/s) 'at the Schottky metal interface should be included in the simulation parameters.
10pcs MBRFCT MBR Schottky diode 30A ...
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