In the run-up to the turn of the millennium, a silent revolution took place in the silicon power electronics industry. Back then, the on-resistance of commercial transistors plummeted by a factor of between three and ten, thanks to the introduction of a superjunction architecture in unipolar, high-voltage devices. To create this device, a super-junction is formed by creating p-type, high-aspect-ratio columns in n-doped vertical drift zones (see Figure 1).
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Today, the super-junction is a cornerstone of the silicon power industry. It features in Infineon’s CoolMOS, ST-Microelectronics MD-Mesh, Fuji’s Super J MOS series, ON Semiconductor’s Super FET and Toshiba’s DTMOS. This class of devices, which is tending to operate in the 500 V to 900 V range, is serving in switched-mode power supplies in phones, laptops, computers and even server farms. They are a invisible, integral part of our daily lives.
One of the attributes of the super-junction transistor, compared with conventional devices, is a higher doping concentration in the n-doped vertical electron conducting path. Blocking capability of the device is maintained by the p-columns, which provide local charge compensation, thereby ensuring that the global electric field is low. Thanks to this,
super-junction transistors provide an ultra-low ohmic switch with a high blocking capability. That’s great from the perspective of a chipmaker, as they can manufacture chips that are smaller – and thus cheaper – for a given on-state resistance. What’s more, these chips can fit into smaller packages.
Recently, sales of silicon power devices have faced ever-stronger competition from those based on SiC. This rival is setting a new benchmark for the efficiency of high-voltage diodes and transistors, which are being deployed in solar panels, wind turbines and electric cars. However, SiC chips are costly, so they need to improve their bang-per-buck.
Figure 1. A cross-section of a vertical silicon super-junction device.
Following in silicon’s footstepsA great way to do this is to bring to market SiC super-junction devices. This would lead to a step-change in on-resistance, and propel energy efficiency to a new high, particularly at the highest blocking voltages of 1.7 kV or more. These attributes would allow products to serve in the likes of solid-state transformers and highly efficient energy-transmission systems in high-speed trains.
Note that a related device, the SiC IGBT, is not up to this task: it suffers from a high threshold voltage – it is typically 2.7 V – and bipolar degradation of the material is an issue. Although the latter problem can be overcome, the most common solution so far is a very costly selection of the seed material and a significantly thicker epitaxial layer, leading to additional cost.
SiC super-junction devices also promise to lower the price of this wide bandgap technology, as chips can be smaller, and thus cheaper. Note that as the nominal breakdown voltage rises, the difference in drift-layer on-resistance between the super-junction design and that of the conventional, unipolar device grows, offering the potential for a greater reduction in chip size (see Figure 2).
Figure 2. Drift layer on-resistance for conventional and super-junction SiC-power MOS, according to the theory described in Jpn. Patent .1
Arguably, the biggest challenge associated with the commercialisation of the SiC MOSFET is the development of suitable, high-volume processes for the manufacture of these transistors. It is not possible to simply adopt the techniques used for making silicon superjunction MOSFETs, due to significant differences between the two materials.For silicon super-junction devices, manufacture tends to involve a multi-epitaxial approach. It begins by ion implanting p- and n- areas side-by-side in an undoped epitaxial layer to define the p-type pillars. Another epi layer is deposited on top, before the implanting process is repeated. Carrying out these steps up to five-to-ten times creates ohmic p- and n-pillars, which are then subjected to a high-temperature diffusion process (see Figure 3).
Figure 3. The manufacture of silicon super-junction devices includes a multi-epitaxy manufacturing step.
With SiC, this approach is not an option. That’s because conventional dopants, such as aluminium and nitrogen, have extremely low diffusion coefficients. This means that it is infeasible to diffuse over distances of 3-5 µm, which are required in SiC super-junction designs.Whatever approach is used has to ensure charge-balancing in the device – and so must realise highly precise doping. That rules out technologies like p-doped epi trench filling, because the doping accuracy in the high-volume production of SiC epitaxial layers is rarely better than between +/- 10 percent and +/-20 percent.
The good news is that there is a solution that is applicable to high-volume production: ion implantation, but without diffusion. We are pioneering a form of this at mi2-factory in Jena, Germany. Our technology is capable of producing deep custom-tailored dopant profiles, and while its application to semiconductor manufacturing is new, in a slightly modified flavour it has been successfully applied in heavy-ion cancer therapy for many years.
Our approach differs from the conventional one, whereby monoenergetic ions are ‘shot’ into a pre-defined depth region known as the projected range. In that case, for a given substrate and ion combination, the projected range is just defined by the ion energy. A single shot creates a gaussian peak of implanted ions. However, it is possible to form extended profiles by creating a sequence of many gaussian profiles, each originating from a different implant energy (see Figure 4).
Figure 4.Two ion implantations with different energies result in essentially gaussian peaks.
Unfortunately, extended profiles require many shots. Simulations suggest that an extended depth range of a few micrometres requires a sequence between 25 and 50 individual implants with differing energies. That’s expensive, complicated and error-prone.We advocate a far simpler approach: one shot, one ion energy and a very special filter. Known as energy filter for ion implantation, our technique involves the use of a micropatterned membrane, which converts a monoenergetic ion beam into a continuum of ion implant energies (see Figure 5). With the membrane in the path, ions are ‘shot’ not only into one depth, but simultaneously into all depths, where maximum depth is defined by the primary ion energy. With this approach, continuous depth profiles are accomplished in a very straight forward manner (see Figure 6).
Armed with our technology, high-volume manufacture of SiC super-junction transistors is possible. Our approach eliminates the need for diffusion, replacing this with a technique that delivers an extremely high level of precision. Production costs are low – just one step is required for ion implanting, with a process that is capable of both aluminium p-type doping and nitrogen n-type doping.
Figure 5. The energy filter for ion implantation pioneered by mi2 factory. The energy of primary ions is modified according to the path length individual ions have to travel through the filter membrane. The long path – through peak – leads to a high loss of energy, while the short path – through a valley – leads to a low loss of energy.
One of the primary limitations of our approach is the limited availability of mega-electron ion beams for SiC wafer manufacturing. To address this we offer SiC chip manufacturing customers a loop process option. This serves those in pilot production, and those manufacturing quantities up to medium-volume production – that is, several hundred wafers per month. For higher volumes, we recommend that fabs install industrial tandetron implanters. Further down the line, we plan to refine our technology so that it is compatible with much simpler ion-implantation equipment, rather than just today’s industrially applied electrostatic tandetrons.Although the membranes for our energy filter for ion-implantation technology are consumables, that does not prevent them from supporting stable, reliable processing. Depending on the ion dose, as many as one hundred 6-inch wafers may be implanted with just a single membrane. Given the very low membrane cost per implant, chip costs generally fall when using our technology, due to benefits that include a reduction in device dimensions associated with the super-junction design.
While our ion-implantation technique may make its case most strongly for the super-junction transistor, it also has a role to play in improving the performance of other SiC power devices, via improvements in doping accuracy (see Figure 7).
Figure 6. Nitrogen depth profile for V SiC devices.
For example, 600 V and V SiC diodes can benefit from our technology. In these devices, the drop in forward voltage is primarily determined by drift layer doping level and thickness – and optimising these two characteristics is governed by the available epi processing technology. For instance, to head off the impact of unintentional low doping levels that result from process variations, SiC diodes are generally designed larger than they would be if optimum processing conditions were available. By switching from in-situ doping during epi deposition to our superior energy filter for ion-implantation technology, we estimate that it may be possible to shrink the area of the V device by about 20 percent.This claim for a reduced chip size is supported by work that we carried out several years ago. Back in , in collaboration with an industry partner, we took part in an R&D project to investigate the impact of doping precision. During this programme, we compared the variations in key characteristics of 600 V merged p-i-n Schottky diodes from regular production with those formed with our ion-implantation technology. We found far narrower parameter distributions for differential resistance, blocking voltage and leakage current, highlighting the potential of our energy filter for ion-implantation technology to reduce chip sizes (see Figure 8).
Figure 7.
The energy filter for ion-implantation technology developed by mi2
factory can be used for making diodes and transistors.
Today, our technology is well-placed to provide the essentially homogenous doping profiles that are needed for diodes and super-junctions. In future, the design of these devices is tipped to evolve, with the introduction of graded drift-layer doping profiles that will propel efficiency to a new level. We intend to support this, having just started to develop an advanced form of our technology that will be capable of delivering more complex doping profiles.
Figure 8. Results from an early R&D project with a chipmaking industrial partner highlight the reduction in the spread of key attributes for diodes.
To support this work, and ultimately our customers, we have developed a software tool that is capable of simulating all types of filter-substrate constellation. This includes masked substrates (see Figure 9).We are confident that interest in our technology will grow. The SiC super-junction is destined to deliver a hike in power-transistor efficiency, and our energy filter for ion-implantation technology is a key enabling technology for the production of these devices. Other diodes and transistors will also benefit from our approach to doping, with the greater accuracy provided by our technology enabling a trimming of dimensions, leading to significant cost savings.
Figure 9. Left: The approach that mi2 factory takes for supporting customer device design with its energy filter for ion-implantation. Right: A 5 µm-deep p-column created in SiC using an energy filter for ion-implantation.
T. Fujihira et al., “Semiconductor device with alternating conductivity type layer and method of manufacturing the same,” Jpn. Patent .1 ()
G. Deboy et al. IEDM 683 ()
For more information, please visit super junction mosfet.
F.Udrea et al. IEEE Trans. Electron Devices 64 713 ()
R. Rupp et al. Materials Science Forum 858 531 ()
S. Agostinelli et al. Nucl. Instrum. Methods Phys. Res 506 250 ()
The Super Junction MOSFET Market of power electronics devices is flourishing, currently, and is expected to grow further, with the advancements in the power devices technologies, especially in super junction technology. Super junction devices fill today the market place; this is the perfect time to review, analyze and forecast the future of super junction technology and devices. Fast switching, low power consumption and high ON resistance are the major factors that are driving the growth of Super Junction MOSFET in the market. With the innovations in fabrication and packaging technology, Power MOSFET devices are getting popular amongst the manufacturers and end user application manufacturers.
The analysis shows that the total Super Junction MOSFET market is projected to reach market revenue worth $2.20 billion by . In terms of the fabrication technology, Multiple-Epitaxy method is almost covering the 100% of the market, whereas Deep-Trench method is gaining popularity with its advance features. Compact packaging techniques like power flat and power module are serving the MOSFET to achieve compact and smaller size, which is need of the day. Germany, China, Japan are highest market sharing countries, and will continue there growth till . Power supplies applications currently shares 67% of the total market, whereas Super Junction MOSFET applications in electric and hybrid electric vehicles and renewable energy resources are expected to have exponential growth in coming five years.
Key take Away
The global Super Junction MOSFET market report, a culmination of extensive primary and secondary research, provides the current size of the global market in terms of revenue; and forecasts for the duration from to . The report analyzes the global market and presents detailed insights of the market by packaging technology, material, fabrication technology, application, and geography. Besides, a detailed analysis on the drivers, restraints, and opportunities of the market is also presented.
The key trends which have emerged in the Super Junction MOSFET market are; the increasing popularity of highly compact and small power supply devices and adaptors; technological innovations in the fabrication and packaging process; high ON state resistance and low power consumption; higher efficiency and low heat dissipation. One of the factors that is adversely affecting the growth of the market is the difficulty faced in the manufacturing and fabrication process of the new technologies. Also Super Junction MOSFET devices are facing increased completion from other technologies like GaN and IGBT. The market is growing, globally; this increasing thrust presents vast opportunities for players across the value chain.
The Super Junction MOSFET market has been segmented as discussed below:
Market by fabrication technology – The market by technology includes Multiple-Epitaxy technology and Deep-Trench technology.
Market by material – The market is segmented into different materials, with respect to the components used in the Super Junction MOSFET device. The report describes the materials used such as substrate material, electrode material, transition Layer /oxide Layer and other materials.
Market by application – The application market is segmented into application of Super Junction MOSFET in power supply application, display application, EV/HEV supply, industrial application and other applications.
Market by geography – The report discusses the display materials market under four geographical heads; namely North America, Europe, APAC, and ROW.
Super Junction MOSFET Market Value ($ Million) and Volume (Million Units), -
Source: MarketsandMarkets Analysis
Table Of Contents
1 Introduction (Page No. - 21)
1.1 Key Take-Aways
1.2 Analyst Insights
1.3 Report Description
1.4 Key Findings
1.5 Markets Covered
1.6 Stakeholders
1.7 Report Assumptions
1.8 Research Methodology
1.8.1 Market Crackdown & Data Triangulation
1.8.2 Key Data Points Taken from Primary Sources
1.8.3 Key Companies of Primary Research
2 Executive Summary (Page No. - 32)
3 Cover Story: EPC Corporation (Page No. - 34)
3.1 Primary Interview
4 Market Overview (Page No. - 36)
4.1 Introduction
4.2 Market Definition
4.2.1 Superjunction Principle
4.3 Market Dynamics
4.3.1 Market Drivers
4.3.1.1 Miniaturization of Power Adaptors andPower Supplies
4.3.1.2 Higher Efficiency
4.3.1.3 Decrease in Heat Dissipation
4.3.1.4 Global Acceptance
4.3.1.5 Easy Manufacturing Techniques
4.3.2 Market Restraints
4.3.2.1 High Production Cost
4.3.2.2 Many New Entrants in The Last Decade
4.3.2.3 Competition from Other Technologies
4.3.3 Market Opportunities
4.3.3.1 Growing Market in APAC
4.3.3.2 ROW Provides A Huge Growth Potential
4.3.3.3 Opportunity in Ev/Hev Applications
4.3.3.4 Opportunity in Renewable Energy Resources Power Supplies
4.4 Burning Issues
4.5 Winning Imperatives
4.6 Global Super Junction MOSFET Market
4.7 Porter’s Five Forces Model
4.7.1 Threat from New Entrants
4.7.2 Threat from Substitues
4.7.3 Bargaining Power of Suppliers
4.7.4 Bargaining Power of Customers
4.7.5 Degree of Competition
5 Market By Technology (Page No. - 53)
5.1 Introduction
5.2 Market By Fabrication Technology
5.2.1 Introduction
5.2.2 Conventional Power MOSFET
5.2.2.1 Difference in Conventional MOSFET and SJ-MOSFET
5.2.3 Multiple Epitaxy Technology
5.2.4 Deep Trench Technology
5.2.5 Analysis of Manufacturing Technologies
5.2.5.1 Transition in SJ-MOSFET Market By Technology
6 Market By Packaging & Material (Page No. - 67)
6.1 Introduction
6.1.1 History of Packaging
6.1.2 New Fabrication Technologies
6.1.2.1 Power Flat Packaging Service
6.1.2.2 Power Module Packaging Service
6.2 Materials In SJ-MOSFET
6.2.1 Substrate Material
6.2.2 Electrode Material
6.2.3 Transition Layer/Oxide Layer
7 Market By Application (Page No. - 76)
7.1 Introduction
7.2 Power Supply Application
7.2.1 Market Power Supply Application By Geography
7.2.1.1 SJ-MOSFET Market from Power Supply Application in North Americas
7.2.1.2 SJ-MOSFET Market from Power Supply Application in Europe
7.2.1.3 SJ-MOSFET Market from Power Supply Application in Asia-Pacific
7.2.1.4 SJ-MOSFET Market from Power Supply Application in Rest of The World
7.2.2 Market from Power Supply Application By End-User Application
7.2.2.1 Desktop Supply
7.2.2.2 Game Console AC/DC
7.2.2.3 Laptops AC/DC
7.2.2.4 Tablets AC/DC
7.2.2.5 Other Supplies
7.3 Industrial Application
7.3.1 Power MOSFET from Industrial Application By Geography
7.3.1.1 SJ-MOSFET Market from Industrial Application in North America
7.3.1.2 SJ-MOSFET Market from Industrial Application in Europe
7.3.1.3 SJ-MOSFET Market from Industrial Application in Asia-Pacific
7.3.1.4 SJ-MOSFET Market from Industrial Application in ROW
7.3.2 Market from Industrial Application By End-User Applications
7.3.2.1 Uninterruptable Power Supplies (UPS)
7.3.2.2 Switched-Mode Power Supply (SMPS)
7.3.2.3 Photovoltaic Inverters (PV)
7.3.2.4 Server Power Supply
7.3.2.5 Other Power Supplies
7.4 Lighting Application
7.4.1 Market from Lighting Application By Geography
7.4.1.1 SJ-MOSFET Market from Lighting Application in North America
7.4.1.2 SJ-MOSFET Market from Lighting Application in Europe
7.4.1.3 SJ-MOSFET Market from Lighting Application in Asia-Pacific
7.4.1.4 SJ-MOSFET Market from Lighting Application in ROW
7.5 Display Application
7.5.1 Market from Display Application, By Geography
7.5.1.1 SJ-MOSFET Market from Display Application in North America
7.5.1.2 SJ-MOSFET Market from Display Application in Europe
7.5.1.3 SJ-MOSFET Market from Display Application in APAC
7.5.1.4 SJ-MOSFET Market from Display Application Market in ROW
7.6 Ev/Hev Supplies
7.6.1 Market from Ev/Hev Application By Geography
7.6.1.1 SJ-MOSFET Market from Ev/Hev Application in North America
7.6.1.2 SJ-MOSFET Market from Ev/Hev Application in Europe
7.6.1.3 SJ-MOSFET Market from Ev/Hev Application in APAC
7.6.1.4 SJ-MOSFET Market from Ev/Hev Application in ROW
7.7 Other Applications
8 Market By Geography (Page No. - 136)
8.1 Introduction
8.2 North America
8.2.1 U.S.
8.2.2 Canada
8.2.3 Others
8.3 Europe
8.3.1 Germany
8.3.2 France
8.3.3 U.K.
8.3.4 Switzerland
8.3.5 Rest of Europe
8.4 APAC
8.4.1 China
8.4.2 Japan
8.4.3 Taiwan
8.4.4 South Korea
8.4.5 Malaysia
8.4.6 India
8.4.7 Singapore
8.4.8 Rest of Asia
8.5 ROW
9 Competitive Landscape (Page No. - 165)
9.1 Overview
9.2 Competitve Analysis
9.2.1 Market Share Analysis
9.3 Recent Industry Developments, Competitive Situation and Trends
9.3.1 New Product Launch/Development
9.3.2 Mergers & Acquisitions
9.3.3 Partnerships/Agreements/Strategic Alliances/Collaboration
9.3.4 Awards/Recognitions/Expansion/ Other Ventures
10 Company Profiles (Overview, Products and Services, Financials, Strategy & Development)* (Page No. - 181)
10.1 Alpha & Omega Semiconductor Limited
10.2 Fairchild Semiconductor International, Inc.
10.3 Efficient Power Conversion Corporation
10.4 Fuji Electric Co., Ltd.
10.5 Fujitsu Limited
10.6 Icemos Technology Corporation
10.7 Infineon Technologies Ag
10.8 International Rectifiers
10.9 Nxp Semiconductors
10.1 On Semiconductor
10.11 Rohm Co., Ltd.
10.12 Stmicroelectronics N.V.
10.13 Toshiba Corporation
10.14 Vishay Intertechnologies Inc.
*Details on Overview, Products and Services, Financials, Strategy & Development Might Not Be Captured in Case of Unlisted Companies.
List of Tables (83 Tables)
Table 1 Assumptions Table
Table 2 Index Table For Impact Analysis
Table 3 Market By Multiple Epitaxy Technology, Value ($Million) and Volume (Million Units), -
Table 4 Market By Deep-Trench Technology, Value ($Million) and Volume (Million Units), -
Table 5 Cost Analysis of Super Junction MOSFET Market
Table 6 Power MOSFET Value By Material, - ($Million)
Table 7 Market By Power Supplies Application, Value ($Million) and Volume (Million Units), -
Table 8 North Americas : Market Value from Power Supply Application, By Country, - ($Million)
Table 9 North Americas: SJ-MOSFET Market Volume from Power Supply Application, By Country, - (Million Units)
Table 10 Europe: SJ-MOSFET Market Value from Power Supply Application, By Country, - ($Million)
Table 11 Europe: SJ-MOSFET Market Volume from Power Supply Application, By Country, - (Million Units)
Table 12 APAC: Market Value from Power Supply Application, By Country, - ($Million)
Table 13 APAC: SJ-MOSFETMarket Volume from Power Supply Application, By Country, - (Million Units)
Table 14 ROW: SJ-MOSFET Market Value ($Million) and Volume (Million Units) from Power Supply Application, -
Table 15 Market By Desktop Application, Value ($Million) and Volume (Million Units), -
Table 16 SJ-MOSFET Market By Game Console Application, Value ($Million) and Volume (Million Units), -
Table 17 SJ-MOSFET Market By Laptop Application, Value ($Million) and Volume (Million Units), -
Table 18 SJ-MOSFET Market By Tablets Application, Value ($Million) and Volume (Million Units), -
Table 19 Market By Other Desktop Application, Value ($Million) and Volume (Million Units), -
Table 20 SJ-MOSFET Market By Industrial Application, Value ($Million) and Volume (Million Units), -
Table 21 North America: SJ-MOSFET Market Value from Industrial Application, By Country, - ($Million)
Table 22 North America: SJ-MOSFET Market Volume from Industrial Application, By Country, - (Million Units)
Table 23 Europe: SJ-MOSFET Market Value from Industrial Application, By Country, - ($Million)
Table 24 Europe: SJ-MOSFET Market Volume from Industrial Application, By Country, - (Million Units)
Table 25 APAC: SJ-MOSFET Market Value from Industrial Application, By Country, - ($Million)
Table 26 APAC: SJ-MOSFET Market Volume from Industrial Application, By Country, - (Million Units)
Table 27 ROW: SJ-MOSFET Industrial Application Market Value ($Million) and Volume (Million Units), -
Table 28 SJ-MOSFET Market, By UPS Application, Value ($Million) and Volume (Million Units), -
Table 29 SJ-MOSFET Market By SMPS Application, Value ($Million) and Volume (Million Units), -
Table 30 SJ-MOSFET Market By PV Inverters Application, Value ($Million) and Volume (Million Units), -
Table 31 SJ-MOSFET Market By Server Supplies Application, Value ($Million) and Volume (Million Units), -
Table 32 SJ-MOSFET Market By Other Industrial Application, Value ($Million) and Volume (Million Units), -
Table 33 SJ-MOSFET Market By Lighting Application, Value ($Million) and Volume (Million Units), -
Table 34 North Americas: SJ-MOSFET Market Value from Lighting Application, By Country, - ($Million)
Table 35 North Americas: SJ-MOSFET Market Volume from Lighting Application, By Country, - (Million Units)
Table 36 Europe: SJ-MOSFET Market Value from Lighting Application, By Country, - ($Million)
Table 37 Europe: SJ-MOSFET Market Volume from Lighting Application, By Country, - (Million Units)
Table 38 APAC: SJ-MOSFET Market Value from Lighting Application, By Country, - ($Million)
Table 39 APAC: SJ-MOSFET Market Value from Lighting Application, By Country, - (Million Units)
Table 40 ROW: SJ-MOSFET Lighting Application Market Value ($Million) and Volume (Million Units), -
Table 41 SJ-MOSFET Market By Display Application, Value ($Million) and Volume (Million Units), -
Table 42 North Americas: SJ-MOSFET Market Value from Display Application, By Country, - ($Million)
Table 43 North Americas: SJ-MOSFET Market Volume from Display Application, By Country, - (Million Units)
Table 44 Europe: SJ-MOSFET Market Value from Display Application, By Country, - ($Million)
Table 45 Europe: SJ-MOSFET Market Volume from Display Application, By Country, - (Million Units)
Table 46 APAC: SJ-MOSFET Market Value from Display Application, By Country, - ($Million)
Table 47 APAC: SJ-MOSFET Market Volume from Display Application, By Country, - (Million Units)
Table 48 ROW: SJ-MOSFET Market from Display Application, Value ($Million) and Volume (Million Units), -
Table 49 SJ-MOSFET Market By Ev/Hev Supplies Application, Value ($Million) and Volume (Million Units), -
Table 50 North Americas: SJ-MOSFET Market Value from Ev/Hev Supplies Application, By Country, - ($Million)
Table 51 North Americas: SJ-MOSFET Market Volume from Ev/Hev Supplies Application, By Country, - (Million Units)
Table 52 Europe: SJ-MOSFET Market Value from Ev/Hev Supplies Application, By Country, - ($Million)
Table 53 Europe: SJ-MOSFET Market Volume from Ev/Hev Supplies Application, By Country, - (Million Units)
Table 54 APAC: SJ-MOSFET Market Value from Ev/Hev Supplies Application, By Country, - ($Million)
Table 55 APAC: SJ-MOSFET Market Volume from Ev/Hev Supplies Application, By Country, - (Million Units)
Table 56 ROW: SJ-MOSFET Market from Ev/Hev Application, Value ($Million) and Volume (Million Units), -
Table 57 SJ-MOSFET Market By Other Application, Value ($Million) and Volume (Million Units), -
Table 58 SJ-MOSFET Market Value By Other Applications, - ($Million)
Table 59 SJ-MOSFET Market Volume By Other Applications, - (Million Units)
Table 60 SJ-MOSFET North American Market, Value ($Million) and Volume (Million Units), -
Table 61 North America: SJ-MOSFET Market By Country, Value (Million Units), -
Table 62 U.S. SJ-MOSFET Market Value ($Million) and Volume (Million Units), -
Table 63 Canada SJ-MOSFET Market Value ($Million) and Volume (Million Units), -
Table 64 Rest of North America SJ-MOSFET Market Value ($Million) and Volume (Million Units), -
Table 65 SJ-MOSFET European Market, Value ($Million) and Volume (Million Units), -
Table 66 Germany SJ-MOSFET Market Value ($Million) and Volume (Million Units), -
Table 67 France SJ-MOSFET Market Value ($Million) and Volume (Million Units), -
Table 68 U.K. SJ-MOSFET Market Value ($Million) and Volume (Million Units), -
Table 69 Switzerland SJ-MOSFET Market Value ($Million) and Volume (Million Units), -
Table 70 Rest of Europe SJ-MOSFET Market Value ($Million) and Volume (Million Units), -
Table 71 SJ-MOSFET APAC Market, Value ($Million) and Volume (Million Units), -
Table 72 China SJ-MOSFET Market Value ($Million) and Volume (Million Units), -
Table 73 Japan SJ-MOSFET Market Value ($Million) and Volume (Million Units), -
Table 74 Taiwan SJ-MOSFET Market Value ($Million) and Volume (Million Units), -
Table 75 South Korea SJ-MOSFET Market Value ($Million) and Volume (Million Units), -
Table 76 Malaysia SJ-MOSFET Market Value ($Million) and Volume (Million Units), -
Table 77 India SJ-MOSFET Market Value ($Million) and Volume (Million Units), -
Table 78 Singapore SJ-MOSFET Market Value ($Million) and Volume (Million Units), -
Table 79 Rest of Asia SJ-MOSFET Market Value ($Million) and Volume (Million Units), -
Table 80 SJ-MOSFET ROW Market, Value ($Million) and Volume (Million Units), -
Table 81 Change In Market Share of Key Industry Players, from To
Table 82 International Rectifier: Products & Services
Table 83 Nxp Semiconductors: Products and Services
List of Figures (64 Figures)
Figure 1 Market Segmentation, SJ-MOSFET
Figure 2 Global SJ-MOSFET Market Research Methodology
Figure 3 Market Size Estimation
Figure 4 Drivers and Restraints of SJ-MOSFET Market
Figure 5 SJ-MOSFET Market Drivers
Figure 6 SJ-MOSFET Market Restraints
Figure 7 SJ-MOSFET Market Opportunities
Figure 8 Global SJ-MOSFET Market, Value ($Million) and Volume (Million Units), -
Figure 9 SJ-MOSFET Market: Porter’s Five Forces Analysis
Figure 10 SJ-MOSFET Market: Threat from New Entrant
Figure 11 SJ-MOSFET Market: Threat from Substitutes
Figure 12 SJ-MOSFET Market: Bargaining Power of Suppliers
Figure 13 SJ-MOSFET Market: Bargaining Power of Buyers
Figure 14 SJ-MOSFET Market: Degree of Competition
Figure 15 SJ-MOSFET Market Segmentation By Technology
Figure 16 SJ-MOSFET Market By Technology, Value ($Million), -
Figure 17 SJ-MOSFET Market By Technology, Volume (Million Units), -
Figure 18 Structure of Conventional MOSFET and SJ-MOSFET
Figure 19 SJ-MOSFET Structure & Fabrication Process Flow Using Multiple Epitaxy Growth Method
Figure 20 SJ-MOSFET Structure & Fabrication Process Flow Using Deep Trench Growth Method
Figure 21 Transition of Technology Percentage Mix, from To
Figure 22 ASP By Technology, -
Figure 23 Advantages of Packaging In SJ-MOSFET
Figure 24 Materials Mix In SJ-MOSFET , (%)
Figure 25 Comparison of Substrate Materials Market, - (%)
Figure 26 SJ-MOSFET Major Materials Market Value ($Million)
Figure 27 SJ-MOSFET Market Segmentation By Application
Figure 28 SJ-MOSFET Market Value By Application, ($Million), -
Figure 29 SJ-MOSFET Market Volume, By Application (Million Units), -
Figure 30 SJ-MOSFET Market from Power Supply Application Segmentation, By Geography
Figure 31 Power Supply Application Segments In SJ-MOSFET Market
Figure 32 SJ-MOSFET Market Segmentation By Geography
Figure 33 SJ-MOSFET Market Value ($Million), By Geography, -
Figure 34 SJ-MOSFET Market Volume (Million Units), By Geography, -
Figure 35 North America: SJ-MOSFET Market Value ($Million), By Country, -
Figure 36 Europe: SJ-MOSFET Market Value ($Million), By Country, -
Figure 37 Europe: SJ-MOSFET Market Volume (Million Units), By Country, -
Figure 38 APAC SJ-MOSFET Market Value ($Million), By Country, -
Figure 39 APAC SJ-MOSFET Market Volume (Million Units), By Country, -
Figure 40 SJ-MOSFET Market: Market Share of Key Industry Players,
Figure 41 Alpha & Omega Semiconductor: Company Snapshot
Figure 42 Alpha & Omega Semiconductor: Products and Services
Figure 43 Alpha & Omega Semiconductor: SWOT Analysis
Figure 44 Fairchild Semiconductor International, Inc.: Company Snapshot
Figure 45 Fairchild Semiconductor: Products & Services
Figure 46 Fairchild Semiconductor: SWOT Analysis
Figure 47 Fuji Electric Co., Ltd.: Company Snapshot
Figure 48 Fuji Electric: Products & Services
Figure 49 Fuji Electric: SWOT Analysis
Figure 50 Fujitsu Limited: Company Snapshot
Figure 51 Fujitsu Ltd.: Products & Services
Figure 52 Fujitsu Ltd.: SWOT Analysis
Figure 53 Infineon Technologies Ag: Company Snapshot
Figure 54 Infineon Technologies: Products & Services
Figure 55 Infineon Technologies: SWOT Analysis
Figure 56 International Rectifiers: Company Snapshot
Figure 57 Nxp Semiconductors: Company Snapshot
Figure 58 On Semiconductor: Company Snapshot
Figure 59 On Semiconductor: Products & Services
Figure 60 Rohm Co. Ltd.: Company Snapshot
Figure 61 Stmicroelectronics: Company Snapshot
Figure 62 St Microelectronics: SWOT Analysis
Figure 63 Toshiba Corporation: Company Snapshot
Figure 64 Vishay: Company Snapshot
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